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A `p-n` photodiode is fabricated from a semiconductor with a band gap of `2.5 eV`. It can detect

A `p-n` photodiode is fabricated from a semiconductor with a band gap of `2.5 eV`. It can detect A `p-n` photodiode is fabricated from a semiconductor with a band gap of `2.5 eV`. It can detect a signal of wavelength

detect

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